Yang Shu
- Professor
- Supervisor of Doctorate Candidates
- Supervisor of Master's Candidates
- Name (Pinyin):Yang Shu
- Business Address:School of Microelectronics, University of Science and Technology of China 242 Huangshan Road, Hefei, 230026 China
- Degree:Dr
- Professional Title:Professor
- Alma Mater:The Hong Kong University of Science and Technology
- Teacher College:School of Microelectronics
- Discipline:Electronic Science and Technology
Contact Information
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- Scientific Research
Research Field
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Paper Publications
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- 1. Z. Han, S. Yang*, M. Wang, C. Chu and S. Long, "Achieving 205 cm2V-1s-1 Inversion Channel Mobility in 1.4 kV Vertical GaN-on-GaN MISFET with Nitride Gate Dielectric," 2024 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2024, pp. 1-4.
- 2. X. Xie, S. Yu, X. Tang, R. Chen, G. Xu, S. Long, S. Yang*, "kV-Class Vertical GaN PiN Diode Under Proton Irradiation: Impact on Conductivity Modulation," IEEE Electron Device Lett., vol. 46, no. 3, pp. 353-356, March 2025..
- 3. J. Du, C. Sun, Q. Tang, B. Jang, Z. Dong, X. Wu, S. Yang*, "An Efficient Switching Transient Analytical Model for P-GaN Gate HEMTs With Dynamic CG(VDS, VGS)," IEEE Trans. Power Electron., vol. 40, no. 1, pp. 2139-2148, Jan. 2025..
- 4. (invited) S. Yang*, S. Han, K. Sheng, and K. J. Chen,"Dynamic on-resistance in GaN power devices: Mechanisms, characterizations and modeling," IEEE J. Emerg. Sel. Topics Power Electron., vol. 7, no. 3, pp. 1425-1439, Sep. 2019.
- 5. S.Han, S.Yang*, and K. Sheng,“Conductivity modulation in vertical GaN PiN diode: Evidence and impact,” IEEE Electron Device Lett., Vol. 42, no. 3, pp.300-303, Mar. 2021. (Featured in CompoundSemiconductor).
Patents
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Published Books
- S.Yang and S.Han, "GaN Metal-Insulator-Semiconductor Field-Effect Transistors,"in Modern Power Electronic Devices: Physics, applications, and reliability, The Institution of Engineering and Technology(IET), ISBN: 978-1-78561-917-5. Chapter 9, 2020.[Monograph].Institution of Engineering and Technology,
- K. J. Chen and S. Yang, "Recent Progress in GaN-on-Si HEMT," in Handbook of GaN Semiconductor Materials and Devices, CRC Press, Taylor & Francis, ISBN: 978-1-4987-4713-4. Chapter 11, 2017.[Monograph].Taylor & Francis,