Yang Shu
- Professor
- Supervisor of Doctorate Candidates
- Supervisor of Master's Candidates
- Name (Pinyin):Yang Shu
- Business Address:School of Microelectronics, University of Science and Technology of China 242 Huangshan Road, Hefei, 230026 China
- Degree:Dr
- Professional Title:Professor
- Alma Mater:The Hong Kong University of Science and Technology
- Teacher College:School of Microelectronics
- Discipline:Electronic Science and Technology
Contact Information
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- Paper Publications
- 1. Z. Han, S. Yang*, M. Wang, C. Chu and S. Long, "Achieving 205 cm2V-1s-1 Inversion Channel Mobility in 1.4 kV Vertical GaN-on-GaN MISFET with Nitride Gate Dielectric," 2024 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2024, pp. 1-4.
- 2. X. Xie, S. Yu, X. Tang, R. Chen, G. Xu, S. Long, S. Yang*, "kV-Class Vertical GaN PiN Diode Under Proton Irradiation: Impact on Conductivity Modulation," IEEE Electron Device Lett., vol. 46, no. 3, pp. 353-356, March 2025..
- 3. J. Du, C. Sun, Q. Tang, B. Jang, Z. Dong, X. Wu, S. Yang*, "An Efficient Switching Transient Analytical Model for P-GaN Gate HEMTs With Dynamic CG(VDS, VGS)," IEEE Trans. Power Electron., vol. 40, no. 1, pp. 2139-2148, Jan. 2025..
- 4. (invited) S. Yang*, S. Han, K. Sheng, and K. J. Chen,"Dynamic on-resistance in GaN power devices: Mechanisms, characterizations and modeling," IEEE J. Emerg. Sel. Topics Power Electron., vol. 7, no. 3, pp. 1425-1439, Sep. 2019.
- 5. S.Han, S.Yang*, and K. Sheng,“Conductivity modulation in vertical GaN PiN diode: Evidence and impact,” IEEE Electron Device Lett., Vol. 42, no. 3, pp.300-303, Mar. 2021. (Featured in CompoundSemiconductor).
- 6. J. Du, S. Yang*, X. Xie, Z. Han, G. Xu and S. Long, "Time-/Current-Dependent Surge Current Capability of Fully-Vertical GaN-on-GaN PiN Diode With Conductivity Modulation," IEEE J. Emerg. Sel. Topics Power Electron., vol. 12, no. 6, pp. 5884-5891, Dec. 2024.
- 7. S. Li, K. Sheng, and S. Yang*, "Temperature-Dependent Dynamic Ron of GaN E-HEMTs: The Impact of p-GaN Drain," IEEE Trans. Electron Devices, vol. 70, no. 7, pp. 3754-3761, July 2023.
- 8. S. Han, S. Yang*, R. Li, X. Wu, and K. Sheng, “Current-collapse-free and fast reverse recovery performance in vertical GaN-on-GaN Schottky barrier diode,” IEEE Trans. Power Electron., vol. 36, no. 6., pp. 5012-5018, Jun. 2019. (Featured in Compound Semiconductor and Semiconductor Today).
- 9. S. Han, S. Yang*, and K. Sheng, “High-voltage and high-ION/IOFF vertical GaN-on-GaN Schottky barrier diode with nitridation-based termination,” IEEE Electron Device Lett., vol. 39, no. 4, pp. 572–575, Apr. 2018. (Featured in Compound Semiconductor and Semiconductor Today).
- 10. Y. Liu, S. Yang*, S. Han, and K. Sheng, “Investigation of surge current capability of GaN E-HEMTs in the third quadrant: the impact of p-GaN contact,” IEEE J. Emerg. Sel. Topics Power Electron., vol. 7, no. 3, pp. 1465-1474, Sep. 2019.