Yang Shu
- Professor
- Supervisor of Doctorate Candidates
- Supervisor of Master's Candidates
- Name (Pinyin):Yang Shu
- Business Address:School of Microelectronics, University of Science and Technology of China 242 Huangshan Road, Hefei, 230026 China
- Degree:Dr
- Professional Title:Professor
- Alma Mater:The Hong Kong University of Science and Technology
- Teacher College:School of Microelectronics
- Discipline:Electronic Science and Technology
Contact Information
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- Paper Publications
- 1. Z. Han, S. Yang*, M. Wang, C. Chu and S. Long, "Achieving 205 cm2V-1s-1 Inversion Channel Mobility in 1.4 kV Vertical GaN-on-GaN MISFET with Nitride Gate Dielectric," 2024 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2024, pp. 40. 2. 1. (Featured in Compound Semiconductor).
- 2. X. Xie, S. Yu, X. Tang, R. Chen, G. Xu, S. Long, S. Yang*, "kV-Class Vertical GaN PiN Diode Under Proton Irradiation: Impact on Conductivity Modulation," IEEE Electron Device Lett., vol. 46, no. 3, pp. 353-356, March 2025.
- 3. J. Du, C. Sun, Q. Tang, B. Jang, Z. Dong, X. Wu, S. Yang*, "An Efficient Switching Transient Analytical Model for P-GaN Gate HEMTs With Dynamic CG(VDS, VGS)," IEEE Trans. Power Electron., vol. 40, no. 1, pp. 2139-2148, Jan. 2025.
- 6. J. Du, H. Lin, D. Hou, S. Long, S. Yang*, "Ultrafast junction temperature mapping during surge current transient and thermal management in vertical GaN PiN diode," 37th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Kumamoto, Japan, Jun 1-5, 2025.
- 7. X. Xie, M. Wang, Z. Wang, Z. Wang, C. Chu, G. Xu, S. Long, S. Yang*, "Enhanced Single-Event Hardness in GaN-on-Si HEMT With Gate-Junction Termination Extension," 37th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Kumamoto, Japan, Jun 1-5, 2025.
- 8. Z. Han, H. Zhang, S. Long, S. Yang*, "Low On-Resistance Vertical GaN-on-GaN Trench MIS-FET with Small Temperature Dependence," 37th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD), Kumamoto, Japan, Jun 1-5. 2025.
- 9. J. Du, S. Yang*, X. Xie, Z. Han, G. Xu and S. Long, "Time-/Current-Dependent Surge Current Capability of Fully-Vertical GaN-on-GaN PiN Diode With Conductivity Modulation," IEEE J. Emerg. Sel. Topics Power Electron., vol. 12, no. 6, pp. 5884-5891, Dec. 2024. (Featured in Compound Semiconductor).
- 4. S. Yang*, et al., "Demonstration of AlXGa1-XN solar-blind UV phototransistor with double heterostructures and winding gate," IEEE Trans. Electron Devices, 2025.
- 5. S. Yang*, et al., "Impact of Structural Variation in SiC MOSFETs on TSEP Performances for Temperature Estimation," IEEE Trans. Electron Devices, 2025.
- 10. Y. Yin, X. Liu, X. Tang, X. Xie, H. Wang, C. Zhao, S. Yang*, "Mechanism of frequency-dependent gate breakdown in p-GaN/AlGaN/GaN HEMTs," Appl. Phys. Lett., vol. 125, no. 17, Oct. 2024, Art. no. 173506.