My research is positioned at the crossroads of interdisciplinary electrical engineering, applied physics, optoelectronics, and photonics. Specifically, I am interested in the investigation of the physics, MBE and MOCVD epitaxy, fabrication, and characterization of semiconductor materials and devices. This includes nanostructures and low-dimensional structures (quantum wires, dots, wells) for nanoelectronics and nanophotonics, based on group III (Al, Ga, In, B)-Nitrides and Oxides. Recently, I have expanded my research to the field of the 2D materials and novel heterojunctions. The device applications include LED/lasers, solar cells, Si-photonics, sensors, power electronics, flexible device and integrated photonics. 主要研究宽禁带（第三代）半导体，主攻光电及电力电子器件及其应用。

孙海定博士现任中国科大微电子学院特任教授，博士生导师，iGaN Laboratory实验室负责人。先后入选国家优青，省杰青，中科院海外高层次人才计划。本科和硕士毕业于华中科技大学，师从刘胜院士。博士毕业于美国波士顿大学，师从氮化物半导体分子束外延奠基人Theodore D. Moustakas教授。长期致力于宽禁带III族氮化物（GaN等）和III族氧化物（Ga2O3等）化合物半导体材料MOCVD和MBE外延、光电器件（LED, laser, photodetector等）和电力电子功率器件（高电子迁移率晶体管HEMTs）设计与制备研究。同时开展包括低维材料与器件（纳米线，量子点），二维/三维新型半导体异质结的材料生长、载流子输运特性、光电集成器件与系统研究。

近年来，共发表SCI论文130余篇，ESI高被引论文8篇，Google引用4000+，包括Nature Electronics, Nature Photonics, Nature Catalysis, Advanced Materials, Light: Science and Application, Laser & Photonics Reviews, Reports on Progress in Physics, Advanced Functional Materials, ACS Nano, Nano Letters, Small, Advanced Optical Materials, Nanoscale, IEEE Electron Device Letters, Applied Physics Letters, Optics Letters and Optics Express等国际重要SCI论文和IEDM等国际电子器件顶会论文。获国内外专利授权20余项，部分技术与工业界合作已经产业化。在国际会议上做口头报告100多次（28次特邀报告），受邀撰写4本专著章节，包括ELSEVIER出版社《Ultrawide Bandgap Semiconductors》书中题为“AlGaN-based thin-film ultraviolet laser diodes and light-emitting diodes”和“Controlling different phases of gallium oxide for solar-blind photodetector application”的两个章节，人民邮电出版社出版的《可见光通信新型发光器件原理与应用》书中题为“非极性和半极性面氮化镓激光器”的章节等。相关科研工作被国际主流科技媒体报道100余次，包括半导体行业权威杂志《Compound Semiconductor》（10余次）、《Semiconductor Today》（5次）等多次月刊封面报道。目前担任光电器件领域国际知名期刊如IEEE Photonics Technology Letters副主编和SPIE Journal of Nanophotonics副主编等，并受邀担任Nano-Micro Letters、有色金属材料学报和 Material Today Electronics 等期刊青年编委。入选2021年度 iCAX Young Scientist Award和 2021年度 IAAM Young Scientist Medal等国际奖项。2014年在波士顿创立美国太阳能公司CloudSolar，被华尔街日报，波士顿环球时报，美国国家广播电台等报道并同时担任墨西哥Solarever集团公司首席科学家。

国际合作：

1.Prof. Boon S. Ooi from KAUST, Saudi Arabia

2.Prof. Zetian Mi from University of Michigan, Ann Abor

3.Prof. Rajendra Singh from Indian Institute of Technology, Delhi

4.Prof. Lan Fu from The Australian National University

5.Prof. Songrui Zhao, McGill University

详细及最新文章请点击：https://www.researchgate.net/profile/Haiding-Sun 

谷歌学术链接：https://scholar.google.com/citations?user=mHLccl8AAAAJ&hl=en

光电材料与器件代表性论文：

      0. M. Huanin, Haiding Sun*et al., A three-terminal light emitting and detecting diode, Nature Electronics, 7, 279-287, 2024

1. D. Wang, Haiding Sun*et al., Bidirectional photocurrent in p–n heterojunction nanowires. Nature Electronics, 4(9), 645-652 (2021) (ESI高被引论文)

2. S. Fang, Haiding Sun*et al., Light-induced bipolar photoresponse with amplified photocurrents in electrolyte-assisted bipolar GaN p-n junction, Advanced Materials, 2300911 (2023) (封面论文)

3. W. Chen, Haiding Sun*et al., Manipulating Surface Band Bending of III-Nitride Nanowires with Ambipolar Charge-Transfer Characteristics: A Pathway Toward Advanced Photoswitching Logic Gates and Encrypted Optical Communication, Advanced Materials, 2307779 (2023) (封面论文)

4. H. Yu, Haiding Sun*et al., Highly Responsive Broadband (250~1000 nm) DUV-NIR Photodetector and Tunable Emitter Enabled by Ⅲ-Ⅴ Nanowire on Silicon for Integrated Photonics, 2023 IEEE International Electron Devices Meeting (IEDM), Paper # Session 20-4 (2023)

5. H. Yu, Haiding Sun*et al., Dual-Functional Triangular-Shape Micro-Size Light-Emitting and Detecting Diode for On-Chip Optical Communication in the Deep Ultraviolet Band, Laser & Photonics Reviews, 2300789 (2023)

6. H. Yu, Haiding Sun*et al., Highly Responsive Switchable Broadband DUV-NIR Photodetector and Tunable Emitter Enabled by Uniform and Vertically Grown III–V Nanowire on Silicon Substrate for Integrated Photonics, Small, 2307458 (2023)

7. Y. Kang, Haiding Sun*et al., Achieving Record-High Photoelectrochemical Photoresponse Characteristics by Employing Co3O4 Nanoclusters as Hole Charging Layer for Underwater Optical Communication, ACS Nano, 17: 3901-3912 (2023)

8. Z. Li, Haiding Sun*, Solar Hydrogen, Advanced Energy Materials, 13(8), 2203019 (2023)

9. M. H. Memon, Haiding Sun*et al., Quantum Dots Integrated Deep-ultraviolet Micro-LED Array Towards Solar-Blind and Visible Light Dual-Band Optical Communication, IEEE Electron Device Letters, 44(3), 472-475 (2023)

10. D. Wang, Haiding Sun*et al., Observation of polarity-switchable photoconductivity in III-nitride/MoSx core-shell nanowires, Light: Science & Applications, 11(1), 1-13(2022) (Cover Article封面文章 并入选 Editors’ Highlight)

11. H. Yu, Haiding Sun*et al., Deep Ultraviolet LEDs Incorporated with SiO2‐Based Microcavities Toward High Speed Ultraviolet Light Communication, Advanced Optical Materials 10 (23), 2201738(2022)

12. S. Fang, Haiding Sun* et al, Balancing the Photo-Induced Carrier Transport Behavior at Two Semiconductor Interfaces for Dual-Polarity Photodetection，Advanced Functional Materials, 31(29), 2202524 (2022)

13. X. Liu, Haiding Sun* et al, Achieving Record High External Quantum Efficiency> 86.7% in Solar‐Blind Photoelectrochemical Photodetection，Advanced Functional Materials, 2201604 (2022) (Cover Article封面文章)

14. D. Wang, Haiding Sun* et al, AlGaN/Pt Nanoarchitecture: Toward High Responsivity, Self Powered Ultraviolet-Sensitive Photodetection Nano Letters, 21(1), 120–129 (2021) (ESI高被引论文)

15. D. Wang, Ran Long, Yujie Xiong, Boon S. Ooi, Zetian Mi, Jr-Hau He, and Haiding Sun*, AlGaN/Pt Nanoarchitecture: Toward High Responsivity, Self Powered Ultraviolet-Sensitive Photodetection Nano Letters, 21(1), 120–129 (2021).  (ESI高被引论文)

16. Yu, H, Haiding Sun* et al, AlGaN-based deep ultraviolet micro-LED emitting at 275 nm. Optics Letters 46(13), 3271-3274 (2021) (2020-2021年度OL期刊高被引论文)

17. C. Huang, Haiding Sun*, Ultraviolet Optoelectronic Devices Based on AlGaN-SiC Platform: Towards Monolithic Photonics Integration System, Nano Energy, 77, 105149 (2020)

18. Y. Qin, Haiding Sun*, Shibing Long*, and Ming Liu, Metal−Semiconductor−Metal ε‑Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism, ACS Photonics 7(3), 812−820, 2020 (Cover Article杂志封面文章，ESI高被引论文前1%)

19. Haiding. Sun* et al., “Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate”, Advanced Functional Materials, 29 (48), 1905445, 2019 # 媒体报道：Featured in Compound Semiconductor，中国科技日报，中国科学报(2020年第7423期头版

20. Haiding Sun* et al, Graded-Index Separated Confinement Heterostructure AlGaN Nanowires: Towards Ultraviolet Laser Diodes Implementation, ACS Photonics, 8, 3305, 2018

21. Haiding Sun* et al, HCl Flow-Induced Phase Change of α-, β- and ε-Ga₂O₃ Films Grown by MOCVD, Crystal Growth & Design, 18, 4, 2370-2376，2018 # 媒体报道：Featured in Compound Semiconductor, Science Newsline, Phys.org, Nanowerk

电力电子器件代表性论文：

22. H. Zhang, Haiding Sun*et al., Boosted High-Temperature Electrical Characteristics of AlGaN/GaN HEMTs with Rationally Designed Compositionally Graded AlGaN Back Barriers, Science China Information Science, 66 (8), 182405 (2023)

23. H. Zhang, Haiding Sun*et al., Effect of in-situ SiNx grown with different carrier gas on structural and electrical properties of GaN-based MISHEMTs, Applied Physics Letters 122 (17) (2023)

24. H. Zhang, Haiding Sun*et al., Room-Temperature Organic Passivation for GaN-on-Si HEMTs With Improved Device Stability, IEEE Tran. on Electron Device (2023) DOI:10.1109/TED.2023.3280863

25. Y. Sun, Haiding Sun*et al., Correlation Between Electrical Performance and Gate Width of GaN-Based HEMTs, IEEE Electron Device Letters, 43 (8), 1199-1203(2022)

26. L. Yang, Haiding Sun*et al., Temperature-dependent photodetection behavior of AlGaN/GaN-based ultraviolet phototransistors， Applied Physics Letters， 120（9），091103(2022) (ESI高被引论文)

27. H. Zhang, Haiding Sun* et al, Compositionally Graded III-Nitride Alloys: Building Blocks for Efficient Ultraviolet Optoelectronics and Power Electronics, Reports on Progress in Physics, 84(4), 044401 (2021) (ESI高被引论文)

28. H. Zhang, Haiding Sun* et al, Demonstration of AlGaN/GaN HEMTs on vicinal sapphire substrates with large misoriented angles, Applied Physics Letters, 119(7), 072104 (2021);

29. H. Zhang, and Haiding Sun* et al, Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6× 107 A/W. Applied Physics Letters, 118(24), p.242105 (2021)

30. Z. Xing, Haiding Sun* et al, Normally-OFF AlGaN/GaN-based HEMTs with decreasingly graded AlGaN cap layer, Journal of Physics D: Applied Physics 56 (2), 025105(2022)

31. B. Zeng, Haiding Sun* et al, DC and low-frequency noise characteristics of GaN-based HEMTs under cryogenic temperatures, Journal of Physics D: Applied Physics 55 (43), 434003(2022)

32. K. Song, Haiding Sun* et al, Normally-off AlN/β-Ga2O3 field-effect transistors using polarization-induced doping Journal of Physics D: Applied Physics 53 (34), 345107 (2020)